[IEEE 1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings - Sinaia, Romania (9-12 Oct. 1996)] 1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings - Modeling of trapped hole induced MOS device degradation during Fowler-Nordheim stressSamanta, P.; Sarkar, C.K. · 1996

[IEEE Twenty-Second National Radio Science Conference, 2005. NRSC 2005 - Cairo, Egypt (2005.03.15-2005.03.17)] Proceedings of the Twenty-Second National Radio Science Conference, 2005. NRSC 2005. - A model to predict the degradation of silicon dioxide films in mos structuresSamanta, P.; Sarkar, C.K. · 2005

[IEEE 1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. - Hong Kong (6-10 Nov. 1995)] 1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings - Influence of neutral hole traps in thin gate oxides on MOS device degradation during Fowler-Nordheim stressSamanta, P.; Sarkar, C.K. · 1995