On optimum design of dislocation filters for reduction of misfit dislocations
- 作者K. Maeda; Y. Yamashita; K. Fujita; S. Fukatsu; K. Suzuki; Y. Mera; Y. Shiraki
- 卷第127卷
- 印刷ISSN0022-0248
- 文件大小471.34KB
- 发表时间1993
- DOI10.1016/0022-0248(93)90659-k
- 页码451-455
Temperature dependency of the composition of GaInAsP grown by GSMBEK. Tappura; T. Hakkarainen; K. Rakennus; H. Asonen · 1992
The substrate—epitaxial interface of GaAs and InP grown by GSMBEK. Tappura; A. Salokatve; K. Rakennus; H. Asonen; M. Pessa · 1991
Growth of InP, InGaAs, and InGaAsP on InP by gas-source molecular beam epitaxyH. Asonen; K. Rakennus; K. Tappura; M. Hovinen; M. Pessa · 1990
Interface effects on electrical properties of high purity InP grown by gas-source molecular beam epitaxyK. Rakennus; K. Tappura; T. Hakkarainen; H. Asonen; R. Laiho; S.J. Rolfe; J.J. Dubowski · 1991
The influence of growth conditions on the composition of GaInAsP grown by gas-source molecular beam epitaxyK. Tappura; T. Hakkarainen; K. Rakennus; M. Hovinen; H. Asonen · 1991
Low dark current In0.53Ga0.47As/InP SAM avalanche photodiodes grown by gas-source MBEG. Zhang; T. Hakkarainen; K. Rakennus; K. Tappura; H. Asonen; M. Pessa · 1992