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[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - A novel SONOS structure of SiO/sub 2//SiN/Al/sub 2/O/sub 3/ with TaN metal gate for multi-giga bit flash memories

[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - A novel SONOS structure of SiO/sub 2//SiN/Al/sub 2/O/sub 3/ with TaN metal gate for multi-giga bit flash memories

Chang Hyun Lee, ; Kyung In Choi, ; Myoung Kwan Cho, ; Yun Heub Song, ; Kyu Charn Park, ; Kinam Kim,
  • 作者Chang Hyun Lee, ; Kyung In Choi, ; Myoung Kwan Cho, ; Yun Heub Song, ; Kyu Charn Park, ; Kinam Kim,
  • 文件大小237.89KB
  • 发表时间2003
  • DOI10.1109/IEDM.2003.1269356
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