![[IEEE Technical Digest., International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1988)] Technical Digest., International Electron Devices Meeting - Novel self-aligned gate process technology for i-AlGaAs/n-GaAs doped-channel hetero-MISFET(DMT) LSIs based on E/D logic gates]()
[IEEE Technical Digest., International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1988)] Technical Digest., International Electron Devices Meeting - Novel self-aligned gate process technology for i-AlGaAs/n-GaAs doped-channel hetero-MISFET(DMT) LSIs based on E/D logic gatesHida, H.; Tsukada, Y.; Ogawa, Y.; Toyoshima, H.; Fujii, M.; Shibahara, K.; Kohno, M.; Nozaki, T. · 1988