Advances in Semiconductor Nanostructures || Atomic Processes on the Silicon SurfaceLatyshev, A.V. · 2017

Advances in Semiconductor Nanostructures || Atomic Processes in the Formation of Strained Ge Layers on Si(111) and (001) Substrates Within the Stransky–Krastanov Growth MechanismTeys, S.A. · 2017

[Lecture Notes in Physics] Advances in the Atomic-Scale Modeling of Nanosystems and Nanostructured Materials Volume 795 || Collective Electron Dynamics in Metallic and Semiconductor NanostructuresMassobrio, Carlo; Bulou, Hervé; Goyhenex, Christine · 2010

GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline siliconChusovitin, E.A.; Goroshko, D.L.; Dotsenko, S.A.; Chusovitina, S.V.; Shevlyagin, A.V.; Galkin, N.G.; Gutakovskii, A.K. · Scripta Materialia · 2017

Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100)Nikiforov, A.I.; Timofeev, V.A.; Tuktamyshev, A.R.; Yakimov, A.I.; Mashanov, V.I.; Gutakovskii, A.K. · Journal of Crystal Growth · 2016

Epitaxial silicon films deposited at high rates by gas-jet electron beam plasma CVDR.G. Sharafutdinov; V.M. Karsten; S.Ya. Khmel; A.G. Cherkov; A.K. Gutakovskii; L.D. Pokrovsky; O.I. Semenova · 2003

Ge/Si quantum dot nanostructures grown with low-energy ion beam-assisted epitaxyA.V. Dvurechenskii; J.V. Smagina; R. Groetzschel; V.A. Zinovyev; V.A. Armbrister; P.L. Novikov; S.A. Teys; A.K. Gutakovskii · 2005

Edge misfit dislocations in the GeSi/Si(001) pair: Conditions and specific features of high-quantity generationYu.B. Bolkhovityanov; A.S. Deryabin; A.K. Gutakovskii; L.V. Sokolov · 2012

Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO2 for non-volatile memory deviceN.P. Stepina; A.V. Dvurechenskii; V.A. Armbrister; V.V. Kirienko; P.L. Novikov; V.G. Kesler; A.K. Gutakovskii; Z.V. Smagina; E.V. Spesivtzev · 2008

Specific features of formation and propagation of 60° and 90° misfit dislocations in GexSi1−x/Si films with x>0.4Yu.B. Bolkhovityanov; A.S. Deryabin; A.K. Gutakovskii; L.V. Sokolov · 2010