![InGaAs/AlInAs strain-compensated Superlattices grown on metamorphic buffer layers for low-strain, 3.6μm-emitting quantum-cascade-laser active regions]()
InGaAs/AlInAs strain-compensated Superlattices grown on metamorphic buffer layers for low-strain, 3.6μm-emitting quantum-cascade-laser active regionsMawst, L.J.; Kirch, J.D.; Chang, C.-C.; Kim, T.; Garrod, T.; Botez, D.; Ruder, S.; Kuech, T.F.; Earles, T.; Tatavarti, R.; Pan, N.; Wibowo, A. · Journal of Crystal Growth · 2013