![[IEEE 2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2017.12.2-2017.12.6)] 2017 IEEE International Electron Devices Meeting (IEDM) - Sub-60 mV/dec ferroelectric HZO MoS<inf>2</inf> negative capacitance field-effect transistor with internal metal gate: The role of parasitic capacitance]()
[IEEE 2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2017.12.2-2017.12.6)] 2017 IEEE International Electron Devices Meeting (IEDM) - Sub-60 mV/dec ferroelectric HZO MoS<inf>2</inf> negative capacitance field-effect transistor with internal metal gate: The role of parasitic capacitanceSi, M.; Jiang, C.; Su, C.-J.; Tang, Y.-T.; Yang, L.; Chung, W.; Alam, M. A.; Ye, P. D. · 2017