On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field EffectGoldman, E. I.; Nabiev, A.; Naryshkina, V. G.; Chucheva, G. V. · Semiconductors · 2019

Direct tunneling of electrons in Al-n+-Si-SiO2-n-Si structures under conditions of nonstationary depletion of the semiconductor surface of the majority charge carriersE. I. Goldman; Yu. V. Gulyaev; A. G. Zhdan; G. V. Chucheva · 2010

Increase in the rate and discretization of the kinetics of isothermal surface generation of minority charge carriers in metal-insulator-semiconductor structures with a planar-inhomogeneous insulatorA. G. Zhdan; E. I. Goldman; Yu. V. Gulyaev; G. V. Chucheva · 2005

Si/SiO2Structures with Quantum Size Effects: The Construction of a Low-Dimensional Nanoscale Electronic System in the Interface Layer of Si by Incorporating a Regularly Distributed Charge into SiO2E. I. Gol'dman; Yu. V. Gulyaev; A. G. Zhdan; G. V. Chucheva · 2001