Verteidigung in Straßenverkehrs-Ordnungswidrigkeitenverfahren () || Frontmatter
- 作者Fromm, Ingo E.
- 文件大小89.53KB
- 发表时间2011
- DOI10.1515/9783110248470.fm
A simple analytical model for gate capacitance-voltage characteristics of HEMTsAmitava DasGupta; Nandita DasGupta · 1994
An analytical expression for sheet carrier concentration vs gate voltage for HEMT modellingNandita DasGupta; Amitava DasGupta · 1993
Pulsed laser deposition of TiO2 for MOS gate dielectricRoy Paily; Amitava DasGupta; Nandita DasGupta; Pijush Bhattacharya; Pankaj Misra; Tapas Ganguli; Lalit M Kukreja; A.K Balamurugan; S Rajagopalan; A.K Tyagi · 2002
Growth of ultra-thin SiO <sub/>2</sub> by laser-induced oxidationKailath, Binsu J; DasGupta, Amitava; DasGupta, Nandita; Singh, B N; Kukreja, L M · Semiconductor Science and Technology · 2009
Effect of Barrier Layer Thickness on Gate Leakage Current in AlGaN/GaN HEMTsTuruvekere, Sreenidhi; DasGupta, Amitava; DasGupta, Nandita · IEEE Transactions on Electron Devices · 2015
Silicon nitride and polyimide capping layers on InGaAs/InP PIN photodetector after sulfur treatmentM.R Ravi; Amitava DasGupta; Nandita DasGupta · 2004
Reactive ion etching of GaN in SF <sub/>6</sub> + Ar and SF <sub/>6</sub> + N <sub/>2</sub> plasmaSreenidhi, T; Baskar, K; DasGupta, Amitava; DasGupta, Nandita · Semiconductor Science and Technology · 2008
Effect of Charge Partitioning on IM3 Prediction in SOI-LDMOS TransistorsGupta, Shubham; Nikhil, KrishnanNadar Savithry; DasGupta, Nandita; DasGupta, Amitava; Chakravorty, Anjan · IEEE Transactions on Electron Devices · 2020