Religious history as religious studies
- 期刊名称Religion
- 作者Lofton, Kathryn
- 卷第42卷
- 期第3期
- 印刷ISSN0048-721X
- 电子ISSN1096-1151
- 文件大小134.67KB
- 发表时间2012-07
- DOI10.1080/0048721X.2012.681878
- 页码383-394
Influence of AsH[sub 3], PH[sub 3],and B[sub 2]H[sub 6] on the Growth Rate and Resistivity of Polycrystalline Silicon Films Deposited from a SiH[sub 4]-H[sub 2] MixtureEversteyn, F. C.; Put, B. H. · Journal of The Electrochemical Society · 1973
Influence of vibrational excitation on the reaction Li(2 [sup 2]P[sub J])+H[sub 2](v=1)→LiH(X [sup 1]Σ[sup +])+HChen, Jye-Jong; Lin, King-Chuen · The Journal of Chemical Physics · 2003
Macromolecule formation in low density CF[sub 4] plasmas: The influence of H[sub 2]M. J. Schabel; T. W. Peterson; A. J. Muscat · 2003
The influence of step geometry on the desorption characteristics of O[sub 2], D[sub 2], and H[sub 2]O from stepped Pt surfacesvan der Niet, Maria J. T. C.; den Dunnen, Angela; Juurlink, Ludo B. F.; Koper, Marc T. M. · The Journal of Chemical Physics · 2010
Influence of H[sub 2]O and O[sub 2] on the Oxidation of Fe and Fe-Cr AlloyBardwell, Jennifer A. · Journal of The Electrochemical Society · 1990
The Influence of H[sub 2]SO[sub 4] Concentration on Hydrogen and Oxygen Electrosorption at PlatinumLezna, R. O. · Journal of The Electrochemical Society · 1979
Selective and deep plasma etching of SiO[sub 2]: Comparison between different fluorocarbon gases (CF[sub 4], C[sub 2]F[sub 6], CHF[sub 3]) mixed with CH[sub 4] or H[sub 2] and influence of the residence timeGaboriau, F.; Cartry, G.; Peignon, M-C.; Cardinaud, Ch. · Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures · 2002
Influence of H[sub 2]O and O[sub 2] on threshold voltage shift in organic thin-film transistors: Deprotonation of SiOH on SiO[sub 2] gate-insulator surfaceKumaki, Daisuke; Umeda, Tokiyoshi; Tokito, Shizuo · Applied Physics Letters · 2008
Surface defects of GaAs epitaxial layers grown by low-pressure OMVPEShigenori Takagishi; Hideki Yao; Hirotaro Mori · 1992
Epitaxial Growth of High-Purity GaAs by Low-Pressure MOCVDTakagishi, Shigenori; Mori, Hideki · Japanese Journal of Applied Physics · 1984
Effect of Operating Pressure on the Properties of GaAs Grown by Low-Pressure MOCVDTakagishi, Shigenori; Mori, Hideki · Japanese Journal of Applied Physics · 1983
Origin and formation mechanism of elliptic-shaped surface defect on GaAs layers grown by molecular beam epitaxyShigenori Takagishi; Hideki Yao; Hirotaro Mori · 1993
Selective Embedded Growth of Al <sub/><i>x</i> </sub> Ga <sub/> 1- <i>x</i> </sub> As by Low-Pressure Organometallic Vapor Phase EpitaxyKamon, Koichi; Takagishi, Shigenori; Mori, Hideki · Japanese Journal of Applied Physics · 1986
Spectral Emissivity of SiliconSatō, Tsutomu · Japanese Journal of Applied Physics · 1967
Surface Acoustic Wave SensorsShiokawa, Showko; Kondoh, Jun · Japanese Journal of Applied Physics · 2004
Perspectives in SonochemistryAndo, Takashi; Kimura, Takahide · Japanese Journal of Applied Physics · 2003
Structurally Stable Hyperbolic BeamChakraborty, Rijuparna; Ghosh, Ajay · Japanese Journal of Applied Physics · 2009
Peierls Phase TransitionKagoshima, Seiichi · Japanese Journal of Applied Physics · 1981
Piezoelectric Tensor of KNbO <sub/>3</sub>Günter, P. · Japanese Journal of Applied Physics · 1977
Plasma Anodic Oxidation of InPFuyuki, Takashi; Moriuchi, Sohta; Matsunami, Hiroyuki · Japanese Journal of Applied Physics · 1983
Linearity Characteristics of Multiplier PhototubesNonaka, Mamoru; Kashima, Takeo · Japanese Journal of Applied Physics · 1963