Issue Information
- 期刊名称Journal of Investigative Psychology and Offender Profiling
- 卷第11卷
- 期第3期
- 印刷ISSN1544-4759
- 文件大小147.97KB
- 发表时间2014-10
- DOI10.1002/jip.1404
High frequency characterization of gate resistance in RF MOSFETsYuhua Cheng; Matloubian, M. · 2001
Frequency-dependent resistive and capacitive components in RF MOSFETsYuhua Cheng; Matloubian, M. · 2001
Parameter extraction of accurate and scaleable substrate resistance components in RF MOSFETsYuhua Cheng; M. Matloubian · 2002
Extraction of the induced gate noise, channel noise, and their correlation in submicron MOSFETs from RF noise measurementsChih-Hung Chen; Deen, M.J.; Yuhua Cheng; Matloubian, M. · 2001
SPIE Proceedings [SPIE International Symposium on Microelectronics and Assembly - Singapore, Singapore (Monday 27 November 2000)] Design, Modeling, and Simulation in Microelectronics - <title>RF modeling of MOSFETs</title>Deen, M. Jamal; Chen, Chih-hung; Naseh, S.; Cheng, Yuhua; Matloubian, M.; Courtois, Bernard; Demidenko, Serge N.; Lau, Lee Y. · 2000
[IEEE 2001 IEEE MTT-S International Microwave Symposium Digest - Phoenix, AZ, USA (20-25 May 2001)] 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157) - Intrinsic noise currents in deep submicron MOSFETsChih-Hung Chen, ; Deen, M.J.; Yuhua Cheng, ; Matloubian, M. · 2001
Graphene Frequency MultipliersHan Wang, ; Nezich, D.; Jing Kong, ; Palacios, T. · IEEE Electron Device Letters · 2009
Impact ionization in GaAs MESFETsHui, K.; Hu, C.; George, P.; Ko, P.K. · IEEE Electron Device Letters · 1990
Stability Analysis in CNTFETsHaji-Nasiri, Saeed; Moravvej-Farshi, Mohammad Kazem · IEEE Electron Device Letters · 2013
A Memristor Device ModelYakopcic, Chris; Taha, Tarek M.; Subramanyam, Guru; Pino, Robinson E.; Rogers, Stanley · IEEE Electron Device Letters · 2011
Junctionless Tunnel Field Effect TransistorGhosh, Bahniman; Akram, Mohammad Waseem · IEEE Electron Device Letters · 2013
Strained SOI FINFET SRAM DesignKerber, Pranita; Kanj, Rouwaida; Joshi, Rajiv V. · IEEE Electron Device Letters · 2013
Electromigration characteristics of copper interconnectsTao, J.; Cheung, N.W.; Hu, C. · IEEE Electron Device Letters · 1993
MOSFET drain breakdown voltageWu-Shiung Feng, ; Chan, T.Y.; Chenming Hu · IEEE Electron Device Letters · 1986