Heavy Ion Characterization of Temporal-, Dual- and Triple Redundant Flip-Flops Across a Wide Supply Voltage Range in a 65 nm Bulk CMOS Process
- 期刊名称IEEE Transactions on Nuclear Science
- 作者Hasanbegovic, Amir; Aunet, Snorre
- 卷第63卷
- 期第6期
- 印刷ISSN0018-9499
- 电子ISSN1558-1578
- 文件大小1712.13KB
- 发表时间2016-12
- DOI10.1109/tns.2016.2614781
- 页码2962-2970
On the ESD Behavior of Large-Area CVD Graphene Transistors: Physical Insights and Technology ImplicationsKranthi, Nagothu Karmel; Mishra, Abhishek; Meersha, Adil; Shrivastava, Mayank · IEEE Transactions on Electron Devices · 2018
Drain-Extended FinFET With Embedded SCR (DeFinFET-SCR) for High-Voltage ESD Protection and Self-Protected DesignsPaul, Milova; Sampath Kumar, B.; Karmel Nagothu, Kranthi; Singhal, Pulkit; Gossner, Harald; Shrivastava, Mayank · IEEE Transactions on Electron Devices · 2019
[IEEE 2019 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2019.3.31-2019.4.4)] 2019 IEEE International Reliability Physics Symposium (IRPS) - Physical Insights into the Low Current ESD Failure of LDMOS-SCR and its Implication on Power ScalabilityKarmel Kranthi, Nagothu; Sampath Kumar, B.; Salman, Akram; Boselli, Gianluca; Shrivastava, Mayank · 2019
[IEEE 2019 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2019.3.31-2019.4.4)] 2019 IEEE International Reliability Physics Symposium (IRPS) - Current Filament Dynamics Under ESD Stress in High Voltage (Bidirectional) SCRs and It's Implications on Power Law BehaviorKarmel Kranthi, Nagothu; Salman, Akram; Boselli, Gianluca; Shrivastava, Mayank · 2019
[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Performance and Reliability Co-design of LDMOS-SCR for Self-Protected High Voltage Applications On-ChipKranthi, Nagothu Karmel; Kumar, B. Sampath; Salman, Akram; Boselli, Gianluca; Shrivastava, Mayank · 2019
[IEEE 2018 31st International Conference on VLSI Design and 2018 17th International Conference on Embedded Systems (VLSID) - Pune, India (2018.1.6-2018.1.10)] 2018 31st International Conference on VLSI Design and 2018 17th International Conference on Embedded Systems (VLSID) - On the ESD Reliability Issues in Carbon Electronics: Graphene and Carbon Nano TubesKranthi, Nagothu Karmel; Mishra, Abhishek; Meersha, Adil; Shrivastava, Mayank · 2018
Electronic-Frequency-Tuning MagnetronObata, Hideyuki; Tsuji, Naoki; Furumoto, Kuniyoshi · IEEE Transactions on Electron Devices · 2012
Potential device applications using photorefractive materialsDube, R.R. · IEEE Transactions on Electron Devices · 1989
GigatronMcIntyre, P.M.; Bizek, H.M.; Elliott, S.M.; Nassiri, A.; Popovic, M.B.; Raparia, D.; Swenson, C.A.; Gray, H.F. · IEEE Transactions on Electron Devices · 1989
Complementary Magnetic Tunnel Junction LogicFriedman, Joseph S.; Sahakian, Alan V. · IEEE Transactions on Electron Devices · 2014
Periodically Allocated Reentrant Cavity KlystronPaoloni, Claudio · IEEE Transactions on Electron Devices · 2014
A theory of multiplication noiseHollenhorst, J.N. · IEEE Transactions on Electron Devices · 1990
Table of contentsIEEE Transactions on Electron Devices · 2014
2014 IEEE CSICS Short CoursesIEEE Transactions on Electron Devices · 2014