A High Speed Si-based Power Transistor with Bipolar-Assisted Gate Discharging Behavior
- 期刊名称IEEE Electron Device Letters
- 作者Lin, Min-Zhi; Liu, Lei; Ye, Zhi-Yuan; Yuan, Yuan-Lin; Yao, Yao; Wang, Peng-Fei
- 印刷ISSN0741-3106
- 电子ISSN1558-0563
- 文件大小5.73KB
- 发表时间2019
- DOI10.1109/led.2019.2899071
- 页码1-1
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